Process manufacturing defects can often impact product yields, depending upon the type, size, and location of the defect, as well as the design and yield sensitivity of the respective semiconductor ...

This work deals with the performance comparison when gallium (group III) material has been mixed with group V materials like phosphide, antimony, arsenide, or nitride on junctionless tunnel ...

CSIRO's quantum-enhanced AI model boosts chip design accuracy using only 5 qubits, outperforming classical methods in ...

Infineon Technologies AG has announced progress in its scalable gallium nitride (GaN) semiconductor manufacturing using ...

The first results of the ETH Zurich and ANSTO collaboration focused on silicon carbide (SiC) devices have been reported in ...

Semiconductor processing is notoriously challenging. It is one of the most intricate feats of modern engineering due to the ...

Utilizing IR PiFM, researchers can accurately analyze contaminants and defects under 20 nm, enhancing surface ...

The first results have been reported on a collaboration between ETH Zürich and Australia's Nuclear Science and Technology Organisation (ANSTO), looking at the impact of radiation on SiC devices for ...

Recent supply chain rumors have indicated that TSMC will withdraw from the gallium nitride (GaN) market, a third-generation ...

A new report from RFC Ambrian lays out the commanding position China has taken in the gallium market and the ... Read More ...

As few as five electrons in a semiconductor can exhibit collective behaviour, forming a “Coulomb liquid”, according to researchers in Europe. This extends the study of correlated systems to electron ...

Semiconductor factories are massive, expensive, and take a while to build. Brooklyn-based Nanotronics wants to change that ...