News

IEEE1d
Small Signal Modeling for GaAs pHEMT Based on LSTM
Abstract: To improve the complex process and low accuracy of traditional small signal modeling, a S-parameters model based on the long short term memory neural network for the gallium arsenide ...
DIGITIMES2d
Infineon targets 4Q25 for 12-inch GaN sample rollout as scaling accelerates
Infineon Technologies AG has announced progress in its scalable gallium nitride (GaN) semiconductor manufacturing using ...
DIGITIMES3d
TSMC confirms exit from GaN wafer foundry business; PSMC secures Navitas transfer orders
Recent supply chain rumors have indicated that TSMC will withdraw from the gallium nitride (GaN) market, a third-generation ...
EE World Online4d
650 V GaN devices challenge SiC in high-power applications
Renesas Electronics announced its Gen 4+ Super GaN platform, featuring 650 V, 30 milliohm gallium nitride devices for ...
Stockhead on MSN4d
China’s dominance of the gallium market is near total – but there’s opportunity for Western disruptors
A new report from RFC Ambrian lays out the commanding position China has taken in the gallium market and the ... Read More ...
pv magazine International6d
Sierra Space adds production capacity for solar power systems for satellites
The company’s solar arrays for space feature high-efficiency gallium arsenide (GaAs) triple junction metal wrap through (MWT) micro-cells, with a power conversion efficiency of 30% at the wafer level, ...