One option for combating a scaling-induced hike in leakage current is to insert a high -κ dielectric between the gate metal ...

Strengths of the double-heterostructure devices, made by engineers at Nanyang Technical University, A*STAR, the Singapore-MIT ...

However, very small structure sizes provoke disruptive short ... in Ka-, Q- and W-band using the newly developed GaN HEMTs.

The GaN wafer’s unique crystal structure is key to its dual functionality ... side to construct high-electron mobility ...