Strengths of the double-heterostructure devices, made by engineers at Nanyang Technical University, A*STAR, the Singapore-MIT ...

One option for combating a scaling-induced hike in leakage current is to insert a high -κ dielectric between the gate metal ...

“I must correct that,” said DPM Gan, who is also Trade and Industry Minister. Singapore has developed “quite an elaborate” code of conduct for how it should develop and deploy AI in an ...

Abstract: This study investigates the electrical DC and Low-frequency noise (LFN) characteristics of GaN-on-Si power MIS-HEMTs across an extensive temperature spectrum from 4 K to 420 K to assess ...

a 20-nm AlGaN barrier and a 2-nm GaN cap layer. TCAD-Sentaurus simulations were performed on this structure. The simulations were calibrated using empirical data obtained from fabricated HEMT devices.

The team believes that the structure was in use until the 8th century BCE, the middle of the period when the Kings of Judah ruled. A scarab seal from the 8th century BCE uncovered during the ...

GaN is a compound that’s made up of gallium and nitrogen and its Wurtzite crystal structure is both very strong and has a high melting point, which makes it suitable for semiconductor base materials ...

Earth's inner core may actually have two distinct layers. (alexlmx/Canva Pro) "We found evidence that may indicate a change in the structure of iron, which suggests perhaps two separate cooling events ...

While alternative objectives have been introduced, issues with fragile losses persist, hindering progress. Popular GAN models like StyleGAN incorporate tricks such as gradient-penalized losses and ...