The team from Wisconsin-Madison claims to be the first to break the 2 kV barrier for monolithic bidirectional GaN HEMTs, with ...
ROHM has developed a new thermal printhead - KA2008-B07N70A - compatible with a 2-cell Li-ion battery (7.2V). It is designed ...
The work 'Hyperbolic phonon-polariton electroluminescence in 2D heterostructures', led by researchers at the US Advanced ...
With the transition from silicon transistors to gallium nitride (GaN) transistors, chargers have become smaller, more efficient, safer, and run cooler. This advancement in technology has ...
Abstract: The single-event effects (SEEs) of AlGaN/GaN HEMT devices under OFF-state, semi-ON-state, and ON-state are systematically investigated from experiments and TCAD simulations. Experimental ...
After hours: March 24 at 4:23:15 PM EDT Loading Chart for GAN ...
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