This paper describes the design and realization of a 60GHz microwave monolithic integrated circuit (MMIC) low-noise amplifier (LNA) based on commercial GaAs metamorphic high electron mobility ...

The company’s solar arrays for space feature high-efficiency gallium arsenide (GaAs) triple junction metal wrap through (MWT) micro-cells, with a power conversion efficiency of 30% at the wafer level, ...

TriQuint Inc. was a leader in developing advanced semiconductor materials like gallium arsenide and gallium nitride. They ...

Goleta-based Aeluma, a start-up company combining compound semiconductor nanomaterials with silicon manufacturing, has ...

This article focuses on the material properties of two III-V semiconductors, AlGaAs and GaInAsP, and their usage as middle cell absorber materials in a wafer-bonded III-V//Si triple-junction solar ...

A new technical paper titled “Performance, efficiency, and cost analysis of wafer-scale AI accelerators vs. single-chip GPUs” was published by researchers at UC Riverside. “This review compares ...

Indium phosphide (InP) wafers are vital in optoelectronic applications due to their lattice-matched epitaxial properties, which make them suitable for producing indium gallium arsenide phosphide ...

One of the main motivations for the great interest in semiconductor nanowires is the possibility of easily growing advanced heterostructures that might be difficult or even impossible to achieve in ...

The application of InP on GaAs is challenging because defects occur during the growth of the InP, which can degrade the performance of the final device. The scientists were able to avoid this by ...