Electrical signals induced in semiconductor devices by a high-resolution scanning electron beam have been used to determine the boundaries of doped (p or n) regions, even when these boundaries lie ...

Superconducting properties of two bismuthide intermetallic compounds, RbBi2 and CsBi2, were studied by means of experimental measurements and ab initio calculations. We show that in both compounds, ...

Theoretical calculation not only is a powerful tool to deeply explore photophysical processes of the emitters but also provides a theoretical basis for material renewal and design strategy in the ...

A new technical paper titled “Practical Guidance on Selecting Analytical Methods for PFAS in Semiconductor Manufacturing Wastewater” was published by researchers at Oregon State University, Corvallis.

Design of modern nanostructured semiconductor devices often calls for simulation tools capable of modeling arbitrarily-shaped multiscale geometries. In this work, to this end, a discontinuous Galerkin ...

Advancements in semiconductor fabrication technologies and chip packaging processes have been central to the explosive growth of these electronic devices.

Taken together, this computational survey establishes a new class of 2D organic-inorganic hybrid semiconductors with adjustable properties and strong electronic and optical performance. The tunability ...