The optical properties of a thin layer of the semiconductor germanium-tin (GeSn) sandwiched between barriers of ...
Researchers at the Institute for Molecular Science (IMS) have definitively resolved a two-decade-long controversy regarding ...
Abstract: A physics based model for the off-state lateral electric field in the channel of an AlGaN/GaN High Electron Mobility Transistor (HEMT) is developed by solving 2-D Poison’s equation under the ...
Abstract: The paper investigates the terahertz performance of a mutually injection-locked multi-element high electron mobility avalanche transit time (HEM-ATT) source based on AlGaN/GaN ...
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