An upgraded HO scale Electro-Motive Division GP38-2 is available from Athearn. The Genesis-series model is now offered with ...

The first results of the ETH Zurich and ANSTO collaboration focused on silicon carbide (SiC) devices have been reported in ...

The first results have been reported on a collaboration between ETH Zürich and Australia's Nuclear Science and Technology Organisation (ANSTO), looking at the impact of radiation on SiC devices for ...

Nexperia designs diodes to protect 48V automotive data communications networks against the destructive effects of ESD.

Nexperia has introduced what are believed to be the industry’s first ESD diodes designed to protect 48 V automotive data ...

Get here detailed ISC Board Class 12 Physics Syllabus chapter-wise, marking scheme, weightage, paper pattern and Download PDF ...

Vertical tunnel diode arrays made from multiwall carbon nanotubes (MWCNTs) have shown recent promise for developing a practical optical rectenna, which is a device to convert electromagnetic waves at ...

Now researchers from University of Science and Technology of China (USTC) have demonstrated a vertical GaN PiN diode with a reverse blocking voltage (BV) higher than 1.7 kV after high-energy proton ...

Schematic of vortex-induced superconducting diode effect. Credit: Communications Physics (2025). DOI: 10.1038/s42005-025-02118-w ...

These advantages stem from the unique electrical and material properties of SiC-based devices — snappy reverse recovery inherent to the structure of the MOSFET body diode, which tempers SiC MOSFET ...

Mitsubishi Electric Corporation (TOKYO: 6503) announced today the upcoming launch of a new MelDIR-brand 80×60-pixel thermal-diode infrared sensor (MIR ...

TOKYO, October 24, 2024--Mitsubishi Electric Corporation (TOKYO: 6503) announced today the upcoming launch of a new MelDIR-brand 80×60-pixel thermal-diode infrared sensor (MIR8060C1) with a 100 ...