This paper describes a simple and accurate model for boron diffusion in SiGe that was successfully implemented in TAURUS (PMEI). The comparison of the Si/sub 1-x/Ge/sub x/ samples to Si samples after ...

Oxygen-Inserted (OI) layers are shown to shield a buried boron profile from oxidation enhanced diffusion. A TCAD model for the OI layer, including point defect and dopant trapping, as implemented in ...

Controlling the structural anisotropy in an electrically doped semiconducting polymer, by tuning interactions between the solvent, dopant and polymer, leads to improved thermoelectric properties.