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Understanding the impact of radiation on silicon carbide devices for space applications
The first results of the ETH Zurich and ANSTO collaboration focused on silicon carbide (SiC) devices have been reported in ...
Compound Semiconductor12h
Understanding the impact of radiation on SiC devices for space
The first results have been reported on a collaboration between ETH Zürich and Australia's Nuclear Science and Technology Organisation (ANSTO), looking at the impact of radiation on SiC devices for ...
IEEE1d
Pt/ZnGa₂O₄ Schottky Barrier Diodes Fabricated by Using Single Crystal n-ZnGa₂O₄ (111) Substrates - IEEE Xplore
In this letter, we fabricated Schottky barrier diodes (SBDs) using n-type zinc gallium oxide (n-ZnGa2O4) single-crystal substrates, which were grown from the melt by the vertical gradient freeze (VGF) ...
IEEE2d
Analysis of the high frequency spreading resistance for surface channel planar Schottky diodes - IEEE Xplore
Spreading resistance of a planar Schottky diode is studied as a function of the frequency and buffer layer thickness. The study shows an increase of effective high frequency resistance for a buffer ...
C&EN3d
Efficient Deep-Blue Light-Emitting Diodes from Highly Luminescent Eu2+-Doped Alkali Metal Halide Nanocrystals via Lattice Field Modulation | Nano Letters - ACS Publications
Lead-halide perovskite nanocrystals (NCs) are promising for fabricating deep-blue (<460 nm) light-emitting diodes (LEDs), but their development is plagued by low electroluminescent performance and ...