Abstract: Heavily doped 4H-silicon carbide (SiC) epitaxial p-n junction diodes are fabricated, and their tunneling current under reverse-biased condition is investigated. Soft increase of the leakage ...
Abstract: This paper presents a study on the PN junction reversed leakage current of zener diode attributed to the surface recombination, and the drift behavior after reliability stress. The leakage ...
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Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60201, United States of America Article Views are the COUNTER-compliant sum of full text article downloads ...
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