Artie McFerrin Department of Chemical Engineering, Texas A&M University, College Station, Texas 77843, United States Department of Materials Science & Engineering, Texas A&M University, College ...
Abstract: We fabricated a gated-anode diode employing an AlGaN/GaN high electron mobility transistor (HEMT) to serve as a rectification device in a 5.8-GHz band microwave wireless power transmission ...
Aiiso Yufeng Li Family Department of Chemical and Nano Engineering, University of California, San Diego, La Jolla, California 92093, United States ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback