Abstract: The capability to fabricate printed and flexible energy harvesting and conditioning circuits, over a large area and with low-cost techniques, is crucial to enable flexible and wearable ...
Abstract: In this work, high-performance GaN vertical Schottky barrier diodes (SBDs) are successfully fabricated on the GaN-on-GaN substrate by using the self-alignment trench structure and argon (Ar) ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback