Abstract: In this work, high-performance GaN vertical Schottky barrier diodes (SBDs) are successfully fabricated on the GaN-on-GaN substrate by using the self-alignment trench structure and argon (Ar) ...
Abstract: This work demonstrates a novel junction termination extension (JTE) with a graded charge profile for vertical GaN p-n diodes. The fabrication of this JTE obviates GaN etch and requires only ...
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