A Schottky-collector resonant tunnel diode detector has been fabricated and characterized at zero bias up to 400 GHz. General device structure and fabrication are discussed, and small-signal ...

A band-to-band tunneling injection insulated-gate bipolar transistor (IGBT) featuring a tunnel junction as the collector p-n junction is proposed. The tunnel junction injects not only holes into the n ...

Two-dimensional (2D) materials hold great promise for high-performance photonic chip-integrated photodetectors, thanks to their outstanding electronic and optical properties as well as ...