10×100-micron TSV was prepared by deep reactive ion etching process. Barrier and seed layer were deposited by physical vapor deposition process and prior to Cu electroplating, Ni was electroplated on ...

Not generally given to hyperbole, when Rolex describes the regulator of calibre 7135 - which powers the Land-Dweller unveiled ...

Making microchips for our electronics means doing some pretty detailed work. A big part of that is something called etching ...

Metal-assisted chemical etching (MACE) is a wet-based anisotropic etching technology designed to address the high cost and surface damage of dry etching. While extensively explored for Si and GaAs, ...

This device can be simply fabricated using a deep reactive ion etching and does not require sidewall metallization. We have theoretically estimated its optical characteristics and experimentally ...