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Abstract: A 1200-V/100-mΩ silicon carbide (SiC) junction field-effect-transistor (JFET)/ gallium nitride (GaN) high-electron-mobility-transistor (HEMT) hybrid power switch is demonstrated, which ...
Noise characteristics of audio amplifiers with field-effect (FET) and bipolar-junction transistor (BJT) differential-pair (DP) input-stage and inductive source impedance are reviewed. The ...
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