Get here detailed ISC Board Class 12 Physics Syllabus chapter-wise, marking scheme, weightage, paper pattern and Download PDF.

With advances in LED technology there is a growing demand for measurement systems to evaluate LED characteristics.

A graphical technique for solving the simplified device equation is then described and used to develop and illuminate the family resemblance among a large number of related p-n junction devices; viz., ...

Temperature-dependent current–voltage measurements of th p-n diodes verify the presence of the implanted p-n junction and reveal an additional 0.43-eV barrier, which we hypothesize arises from a ...

Syllabus: The NTA has put the official JEE Main 2026 Syllabus online on their website: jeemain.nta.nic.in. If you're planning ...

This study presents a non-destructive technique for PN junction depth measurement in silicon wafers, utilizing terahertz waves for nanometer-scale resolution.

PDF for physics from the official Punjab Board website. Access chapter-wise details for physics with the link to download the ...

Si LSI manufacturing technology is essential as the foundation of modern society. However, there was no wafer-scale technology for rapid, non-destructive, and non-contact evaluation of the internal ...

This article is cited by Proposed Distribution of Electron Energy in p–n Junctions and the Theory of Injection M. A. MELEHY (1964) Heat Liberation in Alloy-junction Silicon Diodes L. W. DAVIES ...

Figure |Concept of the non-contact inspection on the PN junction depth.a, Schematic illustration of the buried channel transistor structure. b, THz emission from the PN junction.

Rapid formation of radial p–n junctions on electroless-etched silicon nanowires (SiNWs) was successfully demonstrated. With a low-cost objective, a homemade nonhazardous diffusion source of high ...