These features make them suited for three-phase inverter drive applications such as electronically commutated (EC) fans in AI data centers, heat pumps, commercial HVAC systems, servo motors, robotics, ...
Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops energy-efficient GaN-based power ...
onsemi has introduced the SPM 31 intelligent power module (IPM), its first generation of 1200V silicon carbide (SiC) metal ...
The company says that ICeGaN technology allows EV engineers to enjoy GaN’s benefits in DC-to-DC converters, on-board chargers ...
Magnachip Semiconductor Corporation announced the launch of two new 6th-eneration (Gen6) 650V Insulated Gate Bipolar ...
The first shipments are Gen 2 650V, 40A devices in a TO-247 package with a co-packed diode.
Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower ...
In power electronics, silicon carbide beats silicon in most of the metrics that count, except cost. Infineon is trying to tackle the problem with the first fusion power ...
Cambridge GaN Devices (CGD) has revealed more details about a solution allowing the company to address EV powertrain applications over 100kW – a market worth over $10B - with its ICeGaN GaN technology ...
New-Generation Products Highlight Company’s Increased Focus on Power Optimized conduction and switching losses to enhance system efficiency A diverse range of IGBT products to meet the evolving ...
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