First topic of this paper is related to RF SiC MOSFETs designed and manufactured for high frequency and high-power applications. Discrete RF SiC transistors, Single Ended Modules, and Class D Full ...

The first results of the ETH Zurich and ANSTO collaboration focused on silicon carbide (SiC) devices have been reported in ...

Semiconductor processing is notoriously challenging. It is one of the most intricate feats of modern engineering due to the ...

N thin films with record-high scandium levels, with exciting potential for ultra-low-power memory devices, as reported by ...

Defects can show up in the clock trees that drive scan chains, and even inside blocks of scan cells, which may number in the millions. Jayant D’Souza, technical product director for yield learning ...