DIGITIMES18h
China breaks ground in GaN: first 8-inch N-polar wafer, 100nm PDK signal high-frequency chip ascent
Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based ...
Electronic Design8h
Dynamically Testing WBG Power Semiconductors Down to the Die
Upgrades to Keysight’s double-pulse test systems bring easier and even higher-accuracy measurement of dynamic characteristics ...
Electronic Products6d
SiC MOSFET reduces switching losses
SemiQ’s 1,200-V third-generation SiC MOSFET, in a smaller footprint, reduces switching losses in high power applications.