Vishay has launched 16 SiC Schottky diodes (650 V and 1200 V) in SOT-227 packages, enhancing efficiency in high-frequency ...

The diodes deliver high temperature operation to 175° C and a positive temperature coefficient for easy parallelling.

650 V and 1200 V Schottky devices claimed to offer best trade-off between capacitive charge and forward voltage drop Vishay ...

Vishay Intertechnology, Inc. has announced the introduction of 16 new silicon carbide (SiC) Schottky diodes available in 650 V and 1200 V ratings, housed in the SOT-227 package. Designed for high ...

Vishay Intertechnology, Inc. introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the ...

Vishay Intertechnology ... MOSFET (metal oxide semiconductor field-effect transistor), Diodes, Optoelectronic Components, Resistors, Inductors, and Capacitors. The MOSFET segment offers ...

Joel Smejkal; President, Chief Executive Officer, Director; Vishay Intertechnology Inc David Mcconnell; Chief Financial Officer, Executive Vice President; Vishay Intertechnology Inc Thank you, Towanda ...

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Vishay Intertechnology, Inc. (NYSE: VSH) has announced the launch of 16 new 650 V and 1200 V silicon carbide (SiC) Schottky ...

MALVERN, Pa., Jan. 29, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT ...

which supports the unique position of Vishay. These products are MOSFETs, polymer tantalum capacitors, resistors, voltage suppressors, diodes, and inductors. Also for IC products, we're designing ...