By using resonant-tunneling diodes (RTDs) and high electron mobility transistors (HEMTs), we implement a new class of logic circuits that operate with multiple thresholds and multilevel output. The ...

A compact model for tunnel diode body contact (TDBC) silicon-on-insulator (SOI) n-MOSFETs was developed in this paper. The compact model is implemented in Verilog-A to simulate the dc and radio ...