USTC team reports 1.4 kV/2.0 mΩ·cm 2 regrowth-free vertical GaN trench MIS-FET featuring high inversion channel mobility of 205 cm 2 /V·s with monocrystal-like AlN nitridation interfacial-layer To ...
School of Environmental Science and Engineering, Frontiers Science Center for Transformative Molecules, Shanghai Jiao Tong University, Shanghai, 200240, China ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback