Here is why gallium nitride (GaN) is the natural successor to silicon MOSFETs in the 100–650 V class of power devices.

Japanese start-up Power Diamond Systems has advanced its proprietary diamond MOSFET technology and, for the first time in the world for a diamond-based device, achieved a breakdown voltage of 550 V ...

Today’s highway asphalt pavers are evolving beyond raw production to deliver precision, automation, and smarter material ...

Researchers at Chalmers University of Technology have demonstrated that stacking two quantum materials on top of each other can flip electron spin at room temperature using tiny currents and no ...

In most conventional semiconductors, thermal conductivity decreases as temperature rises because heat-carrying lattice vibrations—called phonons—scatter more frequently.

Scientists have discovered that applying an electric field to certain ceramics can dramatically redirect how heat moves through them.

Alpha and Omega Semiconductor Limited (AOS) , a designer, developer, and global supplier of a broad range of discrete power devices, wide bandgap power devices, power management ICs, and modules will ...

The flow device is primed for security in data center and OEM applications at various stages of the liquid cooling process.

A new technical paper, “Enabling Radiation Hardness in Solid-State NAND Storage Utilizing a Laminated Ferroelectric Stack,” was published by researchers at Georgia Tech. Abstract “NAND flash forms the ...