Multi-Year Development with DARPA Drives Core BAW Technology Differentiation Advanced Single-Crystal Material Delivers Improved Power Handling and Harmonics Enables Broader Use Case for BAW Technology ...

From quartz sand to silicon wafers, the manufacturing process is critical for achieving the purity and quality needed for advanced semiconductor applications.

As silicon based semiconducting technology is approaching the limit of its performance, new materials that may replace or partially replace silicon in technology is highly desired. Recently, the ...

Researchers claims to have developed a method for producing a layer of graphene on a silicon carbide (SiC) wafer to form a semiconductor with a band gap of 0.6 eV and with room temperature electron ...

Wolfspeed, Inc. (NYSE: WOLF), a global leader in silicon carbide technology, today announced a significant industry milestone with the successful production of a single crystal 300mm (12-inch) silicon ...

Device level SiC wafers require a systematic process including single crystal growth, wire cutting, lapping or grinding, and chemical mechanical polishing. SiC wafers have important application value ...

Powerful electronics don't have to come at an environmental cost.Scientists at Osaka Metropolitan University have developed high-performance ...

South Korean researchers have developed a process to produce ultra-thin wafers without sacrificing any of the substrates. Their technique is based on a new approach involving the use of ...

A new technique opens a possibility to replace silicon with 2D materials in semiconducting technology. A prerequisite of building ultra-large-scale high-performance semiconducting circuits is that the ...