Researchers engineered a strained germanium layer on silicon that allows charge to move faster than in any silicon-compatible ...

Most modern semiconductors are fabricated of or on silicon (Si), but as devices get smaller and denser, they dissipate more ...

Researchers are investigating hole mobility in compressively strained germanium on silicon to improve the performance of next ...

Scientists in a recent breakthrough have achieved the “highest hole mobility” ever measured in a material compatible with ...

A strained germanium epilayer on silicon achieves a record hole mobility, enabling faster low-power electronics and scalable ...

Scientists at the University of Warwick and the National Research Council of Canada say ...

Researchers believe they can fit 25 million Josephson junctions — a useful component for quantum computing — on one two-inch wafer with this approach.

In a recent study published in the journal Small, an international team of researchers led by the Vienna University of Technology (TU Wien) examined both the advantages and production methods of ...

As the industry advances into the angstrom era, gate-all-around architectures combined with atomic-scale materials ...

(Nanowerk News) Over the past 70 years, the number of transistors on a chip has doubled approximately every two years – according to Moore’s Law, which is still valid today. The circuits have become ...

Dublin, April 27, 2018 (GLOBE NEWSWIRE) -- The "Global Silicon Germanium Materials & Devices Market: Focus on Material Type (Source, Substrate & Epitaxial Wafer), Device Type (Wireless, Radio, FOT) & ...