Nexperia has introduced what are believed to be the industry’s first ESD diodes designed to protect 48 V automotive data ...

This paper reports the research results of high power silicon carbide Schottky barrier diode (SiC SBD) in three aspects, namely the quality and type selection of SiC materials, device structure of SBD ...

This was made possible by changing the “electronic state of matter on demand” through a technique known as thermal quenching.

The Chinese manufacturer said the result was confirmed by TÜV Rheinland. It was achieved through a sunken pyramid structure that reportedly achieves selective-texture on the non-electrode area of rear ...

A new circuit model based on time-domain characterization of Impact Ionization Avalanche Transit-Time (IMPATT) devices is proposed. The model introduces a new 3 rd order low-pass filter to accurately ...

DAC's AI focus; 300mm fab report; foundry revenue; new auto chip org.; Micron earnings; rare earth exports plummet; UK's tech ...