Nature

Ohmic Contacts in Silicon Carbide

The engineering of ohmic contacts in silicon carbide has emerged as a critical challenge in developing high-performance electronic devices for harsh environments. These contacts serve as the interface ...
Verdict on MSN

Wolfspeed produces single crystal 300mm silicon carbide wafer

The 300mm silicon carbide wafer targets higher production capacity for power electronics and advanced system integration.
Semiconductor Engineering

Silicon Carbide And Gallium Nitride Bring New Challenges For Semiconductor Test

In the era of megatrends such as electric vehicles (EVs), new technologies are emerging to keep up with evolving demands. One example of this is the evolution of compound semiconductors that use ...
NextBigFuture

BREAKTHROUGH Graphene on Silicon Carbide Which Enable Small Amounts of UltraFast THz Chips

Researchers claims to have developed a method for producing a layer of graphene on a silicon carbide (SiC) wafer to form a semiconductor with a band gap of 0.6 eV and with room temperature electron ...
Business Wire

CoolCAD Electronics and RFMW Announce Distribution Agreement for High-Power Silicon Carbide Semiconductor Devices

SAN JOSE, Calif.--(BUSINESS WIRE)--RFMW, part of Exponential Technology Group, Inc., a premier distributor of power management and RF and microwave components serving the electronics industry, today ...
Nature

Ohmic Contacts to P-Type Silicon Carbide

Silicon carbide (SiC) has emerged as a material of choice for high-temperature and high-power applications owing to its wide bandgap, high thermal conductivity and robust electrical properties. In ...