Navitas’ GaN & SiC Devices Power Dell’s™ Family of AI Notebooks
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IIT-BBS opens silicon carbide research centre
Bhubaneswar: IIT Bhubaneswar has opened a Silicon-Carbide Research and Innovation Centre (SiCRIC) on its campus to indigenize the know-how of silicon .
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Navitas’ GaN and SiC devices selected to power Dell’s AI Notebook family
Navitas Semiconductor, a developer of next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power ...
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Vishay expands SiC Schottky diode portfolio
Vishay Intertechnology, Inc. has introduced 16 new 650-V and 1,200-V silicon carbide (SiC) Schottky diodes in the ...
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Prediction: 1 Stock That Will Be Worth More Than Wolfspeed 1 Year From Now
The tech war also drove the U.S. to sanction Chinese silicon carbide devices and China to ban exports of gallium and germanium, which are used in producing such chips. Image source: Getty Images.
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China’s power unit for future space missions gets top grades in orbital tests
The silicon carbide (SiC) power device designed by researchers at the Chinese Academy of Sciences (CAS) has been tested in orbit since it was delivered to China’s space station in November by ...
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Wolfspeed debuts Gen 4 MOSFET portfolio
Wolfspeed introduced its Gen 4 SiC MOSFET platform, supporting long-term roadmaps for high-power, application-optimized ...
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Vishay Intertechnology 650 V and 1,200 V SiC Schottky diodes in SOT-227 package increase efficiency in high frequency applications
The diodes deliver high temperature operation to 175° C and a positive temperature coefficient for easy parallelling.
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Vishay Intertechnology Launches New High-Efficiency 650 V and 1200 V Silicon Carbide Schottky Diodes
Introduction of 16 new silicon carbide Schottky diodes represents a significant expansion of Vishay's product portfolio in high-performance semiconductor solutions. The devices offer improved ...