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More efficient aerospace electronics made with third-generation semiconductor materials will be key to country’s lunar, deep ...

Navitas Semiconductor, a developer of next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power ...

Vishay Intertechnology, Inc. has introduced 16 new 650-V and 1,200-V silicon carbide (SiC) Schottky diodes in the ...

The silicon carbide (SiC) power device designed by researchers at the Chinese Academy of Sciences (CAS) has been tested in orbit since it was delivered to China’s space station in November by ...

WOLF benefits from strong EV demand, key partnerships, and Gen 4 tech amid challenges in industrial markets and factory underutilization.

The diodes deliver high temperature operation to 175° C and a positive temperature coefficient for easy parallelling.

Ion implantation is one of the most critical steps in the manufacturing of Silicon Carbide devices, a market which is estimated by Yole to grow at a 25% CAGR from 2023 – 2029.

Wolfspeed specifically designed its latest generation of SiC MOSFETs to be a better fit for both hard- and soft-switching ...

Vishay Intertechnology, Inc. introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the ...

Infineon Technologies AG  introduces new isolated gate driver ICs for electric vehicles to enhance its EiceDRIVER family. The ...