Successful development of high-performance amorphous P-type oxide semiconductor using tellurium-selenium composite oxide. Professor Yong-Young Noh from the Department of Chemical Engineering at Pohang ...
A new technical paper titled “Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement ...
Researchers reported a deposition process for nanosheet oxide semiconductor. The atomic layer deposition technique was demonstrated for producing field effect transistors for 3D integrated circuits at ...
Doing anything that requires measurements in nanometers is pretty difficult, and seems like it would require some pretty sophisticated equipment. But when the task at hand is growing oxide layers on ...
Review and outlook of atomic layer deposition for nanoscale oxide semiconductor thin film transistor
A group of scientists from Hanyang University has published a report reviewing and discussing the outlook of atomic layer deposition (ALD) based oxide semiconductor thin film transistors (TFTs). The ...
A research team led by Professor Hyukjun Kwon from the Department of Electrical Engineering and Computer Science, Daegu Gyeongbuk Institute of Science and Technology (DGIST; President Kunwoo Lee), has ...
Researchers at Stanford University and TSMC have shown that adding an ultra-thin Al 2 O 3 interlayer improves reliability and ...
Tania Roy studies novel semiconductor materials and devices to advance energy-efficient computing and edge AI.
(Nanowerk News) 3D integrated circuits are a key part of improving the efficiency of electronics to meet the considerable demands of consumers. They are constantly being developed, but translating ...
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