Successful development of high-performance amorphous P-type oxide semiconductor using tellurium-selenium composite oxide. Professor Yong-Young Noh from the Department of Chemical Engineering at Pohang ...

Researchers reported a deposition process for nanosheet oxide semiconductor. The atomic layer deposition technique was demonstrated for producing field effect transistors for 3D integrated circuits at ...

A group of scientists from Hanyang University has published a report reviewing and discussing the outlook of atomic layer deposition (ALD) based oxide semiconductor thin film transistors (TFTs). The ...

Amorphous oxide semiconductors like IGZO (indium gallium zinc oxide) offer acceptable carrier mobility with very low leakage.

Industries worldwide are developing low-cost and efficient thin oxide film (TOF) semiconductors due to their high performance compared to traditional semiconductors. TOF semiconductors can be used ...

Doing anything that requires measurements in nanometers is pretty difficult, and seems like it would require some pretty sophisticated equipment. But when the task at hand is growing oxide layers on ...

A research team led by Professor Hyukjun Kwon from the Department of Electrical Engineering and Computer Science, Daegu Gyeongbuk Institute of Science and Technology (DGIST; President Kunwoo Lee), has ...

OXIDE Corp. (JP:6521) has released an update. OXIDE Corporation is set to transfer its R&D, manufacturing, and sales business for power semiconductor materials to its newly established subsidiary, ...

Researchers from the University of New South Wales (UNSW) have published a study they claim shows capabilities in building out "home-grown" semi-conductors for use in ultra-small electronic devices, ...

(Nanowerk News) 3D integrated circuits are a key part of improving the efficiency of electronics to meet the considerable demands of consumers. They are constantly being developed, but translating ...