Electronics and Telecommunications Research Institute (ETRI) of Korea and its research team have successfully developed core material and device process technologies of gallium oxide (Ga2O3) power ...

Gallium oxide has a band gap of 4.8 eV, with a critical field value of 8 MV/cm. This band gap is 3,000 times that of silicon, more than 8X that of SiC, and more than 4X that of GaN. Theoretically ...

Until recently, most studies on subgap states focused on amorphous IGZO, as sufficiently large single-crystal IGZO (sc-IGZO) ...

Introduction. The rapid growth of critical technologies such as 5G telecommunications and electric mobility demands higher power densities, faster switching frequencies, and greater thermal resilience ...

Many displays found in smartphones and televisions rely on thin-film transistors (TFTs) made from indium gallium zinc oxide ...

These properties make diamond perhaps the ultimate theoretical power semiconductor, ideal for ultra-high-power, ...

It offers many advantages over silicon, the semiconductor used in most computer chips. For example, gallium oxide can support high currents and voltages with low energy losses, and it is easy to grow ...

Overall, the number of power semiconductors used in the global renewable energy market is expected to grow with a compound annual growth rate (CAGR) of 8% to 10% from now to 2027.

Expertise from Forbes Councils members, operated under license. Opinions expressed are those of the author. As renewable energy becomes a larger part of the global energy mix, semiconductors are ...

Semiconductors are defined by their behavior with respect to electricity, and they require electricity to do what they do.When connected to a voltage source, a semiconductor will transmit energy ...