In addition to implementing the core functionality, a design goal for modern circuits is reduced energy consumption. When options for improving active state efficiency are eventually exhausted, the ...

The report, "Green Independent Power Producers in Asia: A Practical Guide for Negotiations and Agreements between Chinese and International Partners," provides a roadmap to overcoming long-standing ...

To overcome these challenges, the researchers applied low-cost MoS 2 nanosheet thin films to the SUS CCs using MOCVD. During cycling, MoS 2 undergoes a conversion reaction with lithium to form Mo ...

GaN-in-SiC device offers higher bandwidth, smaller footprint and higher efficiency than competing devices Qorvo is expanding its SATCOM portfolio with the launch of a new GaN-on-SiC K-band power ...

Common modifications of this classic structure include the deposition of a cocatalyst overlayer (Figure 2 b, which should be a noncompact, noncontinuous layer to preserve the formation of a ...

Energy band diagrams for MOS devices are essential for understanding device performance and reliability. Introduction of high-k gate stacks with a silicon dioxide (SiO 2) interfacial layer requires an ...

Advanced Energy Industries, Inc., a global leader in highly engineered, precision power conversion, measurement and control solutions, announced a new silicon-controlled rectifier power controller ...

From the perspectives of the energy band theory, the bond order-length-strength correlation, the local-bond-averaging approach, and the core–shell configuration for nanostructures, we have reconciled ...