Researchers at the Jülich Research Center and the Leibniz Institute for Innovative Microelectronics (IHP) have developed a ...

A new palladium-loaded amorphous InGaZnOx (a-IGZO) catalyst achieved over 91% selectivity when converting carbon dioxide to ...

Researchers have demonstrated that by using a semiconductor with flexible bonds, the material can be molded into various ...

Japanese researchers revealed that a novel palladium-loaded amorphous InGaZnOx (a-IGZO) catalyst converted carbon dioxide to ...

Researchers at the University of Strathclyde have developed a new method for assembling ultra-small, light-controlling ...

Nexperia announced the addition of two 1200 V 20 A silicon carbide (SiC) Schottky diodes to its continuously expanding ...

A new technique from the University of Strathclyde allows ultra-small photonic devices to be measured, sorted, and assembled ...

This material enabled the world’s first p-type power semiconductor developed using a corundum-type gallium oxide compound. This device is still in R&D. NCT, meanwhile, has demonstrated several gallium ...

N thin films with record-high scandium levels, with exciting potential for ultra-low-power memory devices, as reported by ...

By the late 1800s and early 1900s, the first "semiconductor devices" were being developed in experiments to transmit sound, emit light, and detect radio waves. Later, ...

The National Institute of Information and Communications Technology (NICT), in collaboration with Sony Semiconductor Solutions Corporation (Sony), has developed the world's first practical ...