Traditionally, the Schottky diode equation is often used for characterization of I-V curve of metal/semiconductor contact. Thus researchers in the device community still blindly employ this “old” ...

Munich, Germany — Infineon Technologies AG has launched its second-generation Schottky diodes based on silicon carbide (SiC) technology at this week's Applied Power Electronics Conference (APEC) trade ...

Duraton: 4 hours. In this module on pn junction under bias, we will cover the following topics: Energy band diagram of pn junction under bias, Capacitance-voltage characteristics, Impact ionization, ...

Central Semiconductor has released three EEDTM low-leakage diodes. The CMDSH2-4L, CMOSH2-4L and CMUSH2-4L all consist of a single Schottky diode chip providing a maximum current ...

Schottky diodes high current density and low forward voltage drop means less wasted power compared with ordinary PN junction diodes. This efficiency increase also allows smaller diode heat sinks ...

The DIODES™ SDM5U45EP3 (5A, 45V), DIODES™ SDM4A40EP3 (4A, 40V), and DIODES™ SDT4U40EP3 (4A, 40V) achieve the industry’s highest current densities in their class, addressing market demands ...

Diodes has released its first silicon carbide (SiC) Schottky barrier diodes, including 11 devices rated at 650 V and 8 devices rated at 1200 V. The 650-V DSCxxA065 series provides current ratings of 4 ...

The diodes exhibit neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enhanced system performance. The 2000 V diode family can be matched with the ...

Nexperia has introduced a 10A 650V silicon carbide (SiC) industrial Schottky diode in a 2pin through-hole TO-220 plastic package. Called PSC1065K, the company is not making its full data sheet public ...