Next is the derivation of the Schottky diode current. The analysis of diode breakdown at high voltage is included as well, as is the construction of a SPICE model including parasitic elements. In this ...

The diodes deliver high temperature operation to 175° C and a positive temperature coefficient for easy parallelling.

Vishay Intertechnology, Inc. has introduced 16 new 650-V and 1,200-V silicon carbide (SiC) Schottky diodes in the ...

Tunneling current, Zener breakdown, Energy band diagram of pn junction under forward bias, Continuity equation, Boundary conditions, Ideal diode equation, Long- and short-base diodes, Recombination ...

650 V and 1200 V Schottky devices claimed to offer best trade-off between capacitive charge and forward voltage drop Vishay has introduced 16 new 650 V and 1200 V SiC Schottky diodes in the ...

Vishay Intertechnology, Inc. introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the ...

Vishay Intertechnology, Inc. (NYSE: VSH) has announced the launch of 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes, designed for high-frequency applications where speed ...

MALVERN, Pa., Jan. 29, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT ...

Vishay has launched 16 SiC Schottky diodes with 650-V and 1200-V ratings ... The recently released components include dual diodes in parallel configuration with total forward current ratings ranging ...