The first results of the ETH Zurich and ANSTO collaboration focused on silicon carbide (SiC) devices have been reported in ...

The first results have been reported on a collaboration between ETH Zürich and Australia's Nuclear Science and Technology Organisation (ANSTO), looking at the impact of radiation on SiC devices for ...

In this article, a novel structure design concept [plasma spreading layer (PSL)] is introduced into silicon carbide (SiC) merged PiN Schottky (MPS) diode to improve the surge current capability.

A study of the reverse-leakage-current mechanisms in metal-organic-chemical-vapor-deposition (MOCVD)-grown GaN Schottky-barrier diodes is presented. An analysis is carried out of the characteristics ...