Vishay has launched 16 SiC Schottky diodes (650 V and 1200 V) in SOT-227 packages, enhancing efficiency in high-frequency ...

Traditionally, Schottky diodes were the solution for rectification in transformers’ secondary, because they offer low forward voltage drop and fast switching response. However, their limitations ...

Abstract: In this letter, we present a high-performance aluminum nitride (AlN) lateral Schottky barrier diode (SBD) achieved through rapid thermal annealing (RTA) in an oxygen environment. This ...

due to defect-induced current transport mechanisms in the AlN epilayers. Researchers have recorded values for AlN Schottky barrier diodes that range from 5 to 12. “[Our] work presents an ultra-low ...

To suppress these sneak paths, memristor cells in a crossbar are typically integrated with additional selector components such as transistors or diodes. Although the ... it is more accurate than ...

The diodes deliver high temperature operation to 175° C and a positive temperature coefficient for easy parallelling.

Vishay Intertechnology, Inc. introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the ...

MALVERN, Pa., Jan. 29, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT ...

Vishay has introduced 16 new 650 V and 1200 V SiC Schottky diodes in the industry-standard SOT-227 package. Designed to ...