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IEEE2d
Temperature dependence of current-voltage of Al/p-Si(100) and Ti/p-Si(100) Schottky barrier diodes - IEEE Xplore
The current-voltage (I-V) characteristics on Al/p-Si (100) and Ti/p-Si (100) Schottky barrier diodes (SD) in the temperature range of 25–85°C were carried out. The Schottky barrier height (SBH) and ...
Understanding the impact of radiation on silicon carbide devices for space applications
The first results of the ETH Zurich and ANSTO collaboration focused on silicon carbide (SiC) devices have been reported in ...
Compound Semiconductor3d
Understanding the impact of radiation on SiC devices for space
The first results have been reported on a collaboration between ETH Zürich and Australia's Nuclear Science and Technology Organisation (ANSTO), looking at the impact of radiation on SiC devices for ...
IEEE4d
Analysis of the high frequency spreading resistance for surface channel planar Schottky diodes - IEEE Xplore
Abstract: Spreading resistance of a planar Schottky diode is studied as a function of the frequency and buffer layer thickness. The study shows an increase of effective high frequency resistance for a ...