The first results have been reported on a collaboration between ETH Zürich and Australia's Nuclear Science and Technology Organisation (ANSTO), looking at the impact of radiation on SiC devices for ...

The first results of the ETH Zurich and ANSTO collaboration focused on silicon carbide (SiC) devices have been reported in ...

Abstract: Spreading resistance of a planar Schottky diode is studied as a function of the frequency and buffer layer thickness. The study shows an increase of effective high frequency resistance for a ...

The current-voltage (I-V) characteristics on Al/p-Si (100) and Ti/p-Si (100) Schottky barrier diodes (SD) in the temperature range of 25–85°C were carried out. The Schottky barrier height (SBH) and ...

A phonon-based theoretical framework for liquids marks a major step toward a universal equation of state with broad implications across physics, chemistry and engineering ...

Nexperia has introduced what are believed to be the industry’s first ESD diodes designed to protect 48 V automotive data ...