Compound Semiconductor12d
Building better multi-channel Schottky barrier diodes
Researchers from Singapore’s Nanyang Technological University and its Agency for Science, Technology and Research are ...
Power Electronics World13d
NoMIS increases SiC short-circuit withstand time
NoMIS Power says its long SCWT devices are well-screened for latent defects and offer easier gate driver desaturation (dSat) ...
Compound Semiconductor13d
2000V CoolSiC Schottky diode now in TO-247-2
Infineon has expanded its CoolSiC Schottky diode 2000V G5 product family to include a Schottky diode in the TO-247-2 package, which is pin-compatible with most existing TO-247-2 packages. The product ...
Power Electronics World13d
Toshiba releases driver IC for brushed DC motors
Toshiba Electronics Europe GmbH has begun mass production of the AEC-Q100 qualified TB9103FTG MOSFET gate driver IC, featured in Toshiba’s recent motor control reference design for driving automotive ...
IEEE1mon
Temperature Sensitivity of Vertical Ga₂O₃ Junction Barrier Schottky Diode Using the p-NiO/n-Ga₂O₃ Heterojunction
Abstract: A vertical Ga2O3 junction-barrier Schottky (JBS) diode is fabricated using selective p-NiO/n-Ga2O3 heterojunction and applied in temperature sensing. Compared with the Schottky barrier diode ...