Waipahu, Hawaii-based MJ Motorsports has created this cool build with just a few custom accessories and parts - it looks spectacular ...
Abstract: We present a groundbreaking advancement in ultraviolet (UV) radiation detection technology through the fabrication of a novel (p+)BDD/(n)4H-SiC heterojunction Schottky barrier diode (HSBD).
The SiC MPS diodes from RIR Power Electronics Limited are silicon carbide merged-PiN Schottky devices rated up to 1200 V, combining Schottky and PiN structures to balance low switching losses with ...
Abstract: This article investigates the single event effects (SEEs) in SiC MOSFETs integrated with a junction barrier diode [MOSFET integrated with JBS structure (JMOS)]. During irradiation ...