SemiQ’s 1,200-V third-generation SiC MOSFET, in a smaller footprint, reduces switching losses in high power applications.
AIXTRON partner in the GraFunkL research project: use of graphene in UVC [1] LEDs to combat multi-resistant pathogens ...
Power electronics require robust and thermally stable chips, often fabricated on 8-inch wafers with 90-500nm nodes, making Malaysia’s semiconductor facilities relevant and competitive. Advanced ...
size, and weight are critical. However, moving into 1,000-V-plus applications introduces new challenges. Current GaN devices are predominantly rated up to 650 V, and while research into higher-voltage ...
Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based ...
Upgrades to Keysight’s double-pulse test systems bring easier and even higher-accuracy measurement of dynamic characteristics ...
Interposers and substrates are undergoing a profound transformation from intermediaries to engineered platforms responsible ...
The Global Semiconductor Wafer market is projected to grow significantly, from 24,362.2 million in 2025 to 42,987.0 million ...
ONSEMI EliteSiC SPM 31 IPMs are firm’s first generation of 1200V silicon carbide (SiC) metal oxide semiconductor field-effect transistor (MOSFET) based SPM 31 intelligent power modules (IPMs). IPMs ...
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