Vishay Intertechnology, Inc. introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the ...
The global Silicon Carbide Wafer market is on the brink of significant growth during the forecast period from 2018 to 2025, driven by a surge in demand for low power consumption devices and the ...
The transformative power of artificial intelligence (AI) is undeniable. A recent McKinsey & Company research report estimates ...
The diodes deliver high temperature operation to 175° C and a positive temperature coefficient for easy parallelling.
The process modules provide high-throughput, outstanding uniformity, high-precision, and low-damage processes for wafer sizes ranging up to 200 mm. This helps in several markets, such as GaAs and InP ...