DIGITIMES1d
China breaks ground in GaN: first 8-inch N-polar wafer, 100nm PDK signal high-frequency chip ascent
Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based ...
Electronic Products6d
SiC MOSFET reduces switching losses
SemiQ’s 1,200-V third-generation SiC MOSFET, in a smaller footprint, reduces switching losses in high power applications.
Electronic Design16h
Dynamically Testing WBG Power Semiconductors Down to the Die
Upgrades to Keysight’s double-pulse test systems bring easier and even higher-accuracy measurement of dynamic characteristics ...
Compound Semiconductor22h
EU collaboration steps up heterogeneous design
X-FAB Silicon Foundries, SMART Photonics, and Epiphany Design are developing a heterogeneous photonics integration platform ...
EPT4d
Silicon carbide-based intelligent power modules reduce energy consumption
ONSEMI EliteSiC SPM 31 IPMs are firm’s first generation of 1200V silicon carbide (SiC) metal oxide semiconductor field-effect transistor (MOSFET) based SPM 31 intelligent power modules (IPMs). IPMs ...
Yahoo Finance3d
Wolfspeed, Inc. (WOLF)
After hours: March 24 at 7:59:33 PM EDT Loading Chart for WOLF ...
C&EN2d
Permanent Dipole Moment in a Quantum-Confined Two-Dimensional Metal Revealed by Electric Double Layer Gating
Department of Chemical and Petroleum Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States ...