Hybrid or heterogeneous integration solutions, such as flip-chip, micro-transfer printing or die-to-wafer bonding, involve complex bonding processes or the need for expensive III-V substrates ...

650 V and 1200 V Schottky devices claimed to offer best trade-off between capacitive charge and forward voltage drop Vishay has introduced 16 new 650 V and 1200 V SiC Schottky diodes ... Built on the ...

The diodes deliver high temperature operation to 175° C and a positive temperature coefficient for easy parallelling.

The ambitious project pegged at an investment of INR140 billion (US$1.62 billion), will focus on the production of silicon carbide (SiC ... to produce 10,000 wafers per month, is expected to ...