SemiQ’s 1,200-V third-generation SiC MOSFET, in a smaller footprint, reduces switching losses in high power applications.
Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based ...
ONSEMI EliteSiC SPM 31 IPMs are firm’s first generation of 1200V silicon carbide (SiC) metal oxide semiconductor field-effect transistor (MOSFET) based SPM 31 intelligent power modules (IPMs). IPMs ...
After hours: March 24 at 7:59:33 PM EDT Loading Chart for WOLF ...
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