Vishay Intertechnology, Inc. has introduced 16 new 650-V and 1,200-V silicon carbide (SiC) Schottky diodes in the ...
The diodes deliver high temperature operation to 175° C and a positive temperature coefficient for easy parallelling.
Vishay has launched 16 SiC Schottky diodes with 650-V and 1200-V ratings in SOT-227 packages, enhancing efficiency in high-frequency applications. The devices offer, according to the manufacturer, the ...
Vishay Intertechnology, Inc. introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the ...
today introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 package. Designed to deliver high speed and efficiency for high frequency ...
Vishay has introduced 16 new 650 V and 1200 V SiC Schottky diodes in the industry-standard SOT-227 package. Designed to ...
today introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 package. Designed to deliver high speed and efficiency for high frequency applications, ...
Vishay Intertechnology Launches New High-Efficiency 650 V and 1200 V Silicon Carbide Schottky Diodes
Inc. has announced the introduction of 16 new silicon carbide (SiC) Schottky diodes available in 650 V and 1200 V ratings, housed in the SOT-227 package. Designed for high-frequency applications ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback