HAROLD and the quantum dot module sit within Photon Design’s CAD environment; a library of simulation tools for designing ...

With over twenty years of expertise in silicon carbide development, Infineon adopted a trench-based design to capitalize on the low RDS(on) characteristics of SiC MOSFETs, while ensuring safe oxide ...

SiC substrates account roughly for 47% of the total value, followed by epitaxy at 23%, whilst device design and manufacturing jointly represent the remaining 30%. This unique value chain depends on ...

The department also said it will provide up to $105 million in proposed direct funding to Analog Devices Inc., up to $10.3 million in proposed direct funding to Intelligent Epitaxy Technology ... and ...

Company adjusts figures around lower than expected market penetration of SiC epitaxy technology Veeco Instruments has updated its financial guidance for Q4 and the full year 2024 due to the market ...

College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), State Key Laboratory of Organic Electronics and Information Displays, Nanjing University of Posts ...

Several third-party foundry vendors are entering or expanding their efforts in the silicon carbide (SiC) business amid booming demand for the technology. However, making a significant dent in the ...